Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

130 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

75A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Series  

HEXFET®

Published  

2003

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

2MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Voltage - Rated DC  

40V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

75A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6450pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

240nC @ 10V

Rise Time  

120ns

Vgs (Max)  

±20V

Fall Time (Typ)  

130 ns

Continuous Drain Current (ID)  

75A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

270A

Drain to Source Breakdown Voltage  

40V

Avalanche Energy Rating (Eas)  

540 mJ

Recovery Time  

84 ns

Max Junction Temperature (Tj)  

175°C

Height  

4.83mm

Width  

9.65mm

Length  

10.668mm

RoHS Status  

ROHS3 Compliant

REACH SVHC  

No SVHC

Radiation Hardening  

No

Lead Free  

Contains Lead